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2SD1383K
Transistors
High-gain Amplifier Transistor (32V , 0.3A)
2SD1383K
Features 1) Darlington connection for high DC current gain. 2) Built-in 4k resistor between base and emitter. 3) Complements the 2SD852. Packaging specifications
Type Package hFE Marking Code Basic ordering unit (pieces) 2SD1383K SMT3 B W T146 3000
(1)Emitter (2)Base (3)Collector Each lead has same dimensions
(2)
External dimensions (Unit : mm)
2SD1383K
2.9 0.4
(3)
1.6 2.8
1.1 0.8
(1)
0.95 0.95
0.15
1.9
Denotes hFE
Circuit diagram
C
B
RBE
4k
E : Emitter B : Base C : Collector
E
Absolute maximum ratings (Ta=25C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 40 32 6 0.3 1.5 0.2 150 -55 to +150 Unit V 1 V V A (DC) A (Pulse) 2 W C C
Collector current Collector power dissipation Junction temperature Storage temperature
1 RBE=0 2 Single pulse Pw=10ms
Electrical characteristics (Ta=25C)
Parameter
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance
1 Measured using pulse current. 2 Transition frequency of the device.
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob
Min. 40 32 6 - - 5000 - - -
Typ. - - - - - - - 250 3
Max. - - - 1 1 - 1.5 - -
Unit V V V A A - V MHz pF
Conditions IC=100A IC= -1mA , RBE=0 IE=100A VCB=24V VEB=4.5V VCE=5V, IC=0.1A IC=200mA, IB=0.4mA
1
VCE=5V, IE= -10mA, f=100MHz 2 VCB=10V, IE=0A, f=1MHz
0.3Min.
Rev.B
1/2
2SD1383K
Transistors
Electrical characteristic curves
125
500
VCE=6V
100
POWER DISSIPATION : PC/PCMax (%)
COLLECTOR CURRENT : IC (mA)
100
200 100
Ta=25C
COLLECTOR CURRENT : IC (mA)
IB=10A
Ta=25C
9A 8A
50
75
Ta= -55C
50 20 10 5 2
Ta=100C
7A 6A
5A
4A
50
25
0 0
0
25 50 75 100 125 150
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
0 0
1
3A 2
3
4
5
AMBIENT TEMPERATURE : Ta (C)
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Power dissipation curves
Fig.2 Ground emitter propagation characteristisc
Fig.3 Ground emitter output characteristics
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
Ta=25C 50000
DC CURRENT GAIN : hFE
DC CURRENT GAIN : hFE
VCE=5V
IC/IB=500 2
Ta= -55C
5V 20000 10000 5000 VCE=3V 2000 1000 500 5 10 20 50 100 200 500 1000 2000
100000 50000
C 00 =1 Ta C 25
1 0.5
100C
25C
20000 10000 5000
C -55
0.2
5
10
20
50 100
200
500 1000 2000
0.1 0.5
1
2
5
100
200
500 1000 2000
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs. collector current ( )
Fig.5 DC current gain vs. collector current ( )
Fig.6 Collector-emitter saturation voltage vs. collector current
TRANSISION FREQUWNCY : fT (MHz)
OUTPUT CAPACITANCE : Cob (pF)
Ta=25C VCE=6V
EMITTER INPUT CAPACITANCE : Cib (pF)
Ta=25C f=1MHz IE=0A
20 10
Ta=25C f=1MHz IE=0A
500
20
200 100
10 5
5
50
2
2
-1
-2
-5
-10
-20
-50 -100
1
2
5
10
20
50
1
1
2
5
10
EMITTER CURRENT : IE (mA)
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.7 Gain bandwidth product vs. emitter current
Fig.8 Collector output capacitance vs. collector-base voltage
Fig.9 Emitter input capacitance vs. emitter-base voltage
Rev.B
2/2
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

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